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| SQ7415EN Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration PowerPAK 1212-8 FEATURES - 60 0.065 - 5.7 Single S * TrenchFET(R) Power MOSFET * Package with Low Thermal Resistance Pb-free Available AEC-Q101 RELIABILITY * Passed all AEC-Q101 Reliability Testing RoHS* COMPLIANT 3.30 mm S 1 2 3 S S 3.30 mm G G 4 D 8 7 6 5 D D D D P-Channel MOSFET Bottom View ORDERING INFORMATION Package Lead (Pb)-free SnPb PowerPAK 1212-8 SQ7415EN-T1-E3 SQ7415EN-T1 ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Energy Single Pulse Avalanche Current Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 70 C TC = 25 C TC = 70 C SYMBOL VDS VGS ID IS IDM EAS IAS PD TJ, Tstg LIMIT - 60 20 - 3.6a - 2.9a - 1.3a - 30 1.5 0.8 - 55 to + 175 mJ A W C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). PCB Mountc SYMBOL RthJA RthJC LIMIT 81 2.4 UNIT C/W Document Number: 74488 S-81558-Rev. B, 01-Jul-08 www.vishay.com 1 SQ7415EN Vishay Siliconix SPECIFICATIONS TC = 25 C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Time c Rise Timec Turn-Off Delay Timec Fall Timec Pulsed Currenta Forward Voltage Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ISM VSD trr IRM(REC) Qrr IF = - 3.2 A, dI/dt = 100 A/s IF = 85 A, VGS = 0 V VDD = - 30 V, RL = 30 ID - 1 A, VGEN = - 10 V, Rg = 6 VGS = - 10 V VDS = - 30 V, ID = - 5.7 A VGS = 0 V VDS = 25 V, f = 1 MHz 15 4 3.2 12 12 22 16 45 25 20 20 35 25 90 A V ns A C ns nC pF VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 20 V VGS = 0 V VGS = 0 V VGS = 0 V VGS = - 10 V VGS = - 10 V VGS = - 10 V VGS = - 10 V VDS = - 60 V VDS = - 60 V, TJ = 125 C VDS = - 60 V, TJ = 175 C VDS - 5 V ID = - 5.7 A ID = 30 A, TJ = 125 C ID = 30 A, TJ = 175 C - 1.5 - 20 11 0.054 - 3.0 100 - 1.0 - 5.0 0.065 S A A V nA SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS = - 15 V, ID = - 5.7 A Source-Drain Diode Ratings and Characteristics TC = 25 Cb Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 20 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 12 4V 8 12 8 TC = 125 C 4 25 C 0 4 3V 0 0 1 2 3 4 5 - 55 C 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 300 0.20 Transfer Characteristics 250 g fs - Transconductance (S) R DS(on) - On-Resistance () 0.16 200 150 100 Graph to be available upon completion of testing 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 50 0 0 20 40 60 80 100 120 0.00 0 4 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance 1200 10 On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 1000 C - Capacitance (pF) Ciss 8 VDS = 30 V ID = 5.7 A 800 6 600 4 400 Coss Crss 200 2 0 0 10 20 30 40 50 60 0 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 74488 S-81558-Rev. B, 01-Jul-08 Gate Charge www.vishay.com 3 SQ7415EN Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1.8 VGS = 10 V ID = 5.7 A I S - Source Current (A) 20 TJ = 150 C 10 1.6 R DS(on) - On-Resistance (Normalized) 1.4 1.2 1.0 TJ = 25 C 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.20 56 Source Drain Diode Forward Voltage R DS(on) - On-Resistance () 0.16 ID = 5.7 A 0.12 52 48 0.08 Graph to be available upon completion of testing VDS (V) 44 0.04 0.00 0 2 4 6 8 10 40 - 50 - 25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) T J - Junction Temperature (C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 C, unless otherwise noted 120 1000 100 I D - Drain Current (A) 100 80 60 Graph to be available upon completion of testing 10 Graph to be available upon completion of testing 40 1 20 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (C) I Dav (A) 0.1 0.00001 0.0001 0.001 TAV (s) 0.01 0.1 1 Maximum Drain Current vs. Ambient Temperature 50 0.8 Avalanche Current vs. Time 40 V GS(th) Variance (V) 0.6 ID = 250 A Power (W) 0.4 30 0.2 20 0.0 10 - 0.2 0 0.01 0.1 1 Time (s) 10 100 600 - 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (C) Single Pulse Power, Junction-to-Ambient 1000 Threshold Voltage 100 I D - Drain Current (A) 10 Graph to be available upon completion of testing 1 0.1 0.1 * VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 74488 S-81558-Rev. B, 01-Jul-08 www.vishay.com 5 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Ambient 1000 100 IAS(PEAK) (A) 10 1 Graph to be available upon completion of testing 0.1 0.01 10-4 10-3 10-2 10-1 tav (s) 1 10 100 1000 Single Pulse Avalanche Current (Peak) vs. Time in Avalanche www.vishay.com 6 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 C, unless otherwise noted 1000 100000 E(av)(peak) (mJ) 100 IAS(peak) (A) Graph to be available upon completion of testing 10000 Graph to be available upon completion of testing 10 1000 1 0.1 1 10 Inductance (mH) 100 100 25 50 75 100 125 150 TJ(start) (C) Single Pulse Avalanche Current (Peak) vs. Inductance Single Pulse Avalanche Energy (Peak) vs. TJ(start) 10 1 IAR(peak) (A) Graph to be available upon completion of testing 0.1 0.01 10-4 10-3 10-2 10-1 tav (s) 1 10 100 1000 Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 C Document Number: 74488 S-81558-Rev. B, 01-Jul-08 www.vishay.com 7 SQ7415EN Vishay Siliconix THERMAL RATINGS TA = 25 C, unless otherwise noted 10 1 IAR(peak) (A) Graph to be available upon completion of testing 0.1 0.01 10-4 10-3 10-2 10-1 tav (s) 1 10 100 1000 Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 C Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs. Inductance - Single Pulse Avalanche Energy (Peak) vs. TJ (start) - Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 25 C - Repetitive Avalanche Current (Peak) vs. Time in Avalanche at TA = 150 C are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74488. www.vishay.com 8 Document Number: 74488 S-81558-Rev. B, 01-Jul-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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